GALLIUM NITRIDE (GaN) FET
Drain-Source Voltage: 650V
Transient Drain-Source Voltage: 800V
Drain-Source On-State Resistance: 245mΩ
Typical Total Gate Charge: 22nC
Continuous Drain Current: 9A
▲ SMD type
▲ Normally off device
▲ Easy to drive with standard MOSFET driver
▲ Small size in 8mm x 8mm ▲ Thin DFN8080 package
▲ Moisture Sensitivity Level ▲ MSL 3
▲ Ultra-low QRR and very robust design
Datasheet 
