SILICON (Si) MOSFET ▲ DUAL N-Channel
Drain-Source Voltage: 20V
Continuous Drain Current: 4A
Drain-Source On-State Resistance at Vgs 4.5V: 45mΩ
Total Gate Charge at Vgs 4.5V: 4.7nC
Power Dissipation: 1.1W
▲ SMD type
▲ Dual N-channel enhancement mode
▲ High cell density for low on-resistance
▲ TSOP6 package
▲ RoHS compliant
▲ Rugged and reliable
Datasheet 
