SILICON CARBIDE (SiC) SCHOTTKY DIODE
Repetitive Peak Reverse Voltage: 650V
Continuous Forward Current: 4A
Total Capacitive Gate Charge at 25°C: 12nC
Diode Forward Voltage at 25°C: 1.4V
Capacitance Stored Energy: 3µJ
▲ SMD type
▲ Excellent surge capability
▲ Easy paralleling due to positive VF temperature coefficient
▲ Flat DFN 5x6 package
▲ Temperature independent switching
▲ Ultra-low forward voltage and high surge current
Datasheet 
