GALLIUM NITRIDE GaN on Si EPI-WAFERS
6 inch p-type low resitivity Si substrate
Wafer diameter: 150.0 ± 0.5mm
Thickness: 1000 ± 25 μm
Suface finishing: One-side polished
Resistivity:0.01 ~ 0.025 Ωcm
▲ High uniformity
▲ Sophisticated buffer layer for low leakage current
▲ Perfect base for high electron mobility transistors (HEMT)
▲ Excellent 2DEG characteristics
▲ High breakdown voltage with 650V
Datasheet 
