SILICON CARBIDE (SiC) SCHOTTKY DIODE
Repetitive Peak Reverse Voltage: 1200V
Continuous Forward Current: 2 x 10A
Total Capacitive Gate Charge at 25°C: 55nC/110nC
Diode Forward Voltage at 25°C: 1.4V
Capacitance Stored Energy: 27µJ/54µJ
▲ THT type
▲ Common cathode circuit configuration
▲ Easy paralleling due to positive VF temperature coefficient
▲ TO-247-3L package
▲ Temperature independent switching
▲ Ultra-low forward voltage and high surge current
Datasheet 
