GALLIUM NITRIDE GaN on SiC EPI-WAFERS
4 inch high-purity semi-insulating SiC substrate
Wafer diameter: 100.00 +0/-0.5mm
Thickness: 500 ± 25 μm
Suface finishing: Si-face, CMP polish, C-face optical polish
Resistivity: > 1 x 10^7 Ωcm
▲ Lowest defect density of the crystal
▲ Sophisticated buffer layer for low leakage current
▲ Perfect base for all kind of RF devices
▲ Highest power density
▲ Superior thermal conductivity due to the SiC substrate
Datasheet 
